Feature

●➹【Easy to read data】--FRAM is non-volatile and can be easily read/written 10 trillion times.
●➹【Dynamic Storage】--The Fram Breakout is similar to Dynamic Random Access Memory (DRAM), using only the ferroelectric layer instead of the dielectric layer.
●➹【Buffered Data】-- Non-Volatile FRAM Breakout is especially suitable for low-power data loggers and buffers data without a stable voltage source.
●➹【Good Chip】 -- The FRAM chip used by the FRAM Breakout Board provides 8 KB of memory and uses clocks up to 20 MHz.
●➹【Save for a long time】 -- Each byte of the FRAM Breakout Board can be read and written immediately, but it will be stored for 95 years at room temperature.


Description

Features:
FRAM is non-volatile and can easily be read/written 10 trillion times. Its similar to Dynamic random-access memory (DRAM), only with a ferroelectric layer instead of a dielectric layer. It is particularly suitable for use with low power data loggers and for buffering data in the absence of a stable voltage source. The FRAM chip used provides 8 KB of memory, and USES a clock up to 20 MHz. Each byte can be read and written instantaneously, but will keep the memory for 95 years at room temperature.
Specification:
Condition: 100% brand new
Addr: 1010+A2+A1+A0
Default: 0 x 50
VCC/Logic: 2.7-5.5V

Package List:
1 x FRAM Breakout Board