Feature

●General Purpose Switching Circuits
●Interfacing and coupling systems of different potentials and impedances
●Regulation Feedback Circuits
●Monitor & Detection Circuits
●NOTE:Exposure to absolute maximum rating conditions for extended periods may affect device reliability


Description

The 4N35 devices consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.
Package Including:
10pcs*4N35