Feature

●The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual inline package
●Minimum BVceo of 70 V Guaranteed
●UL1577, 5,000 VACRMS for 1 Minute
●DIN EN/IEC60747-5-5
●Example Applications: Power Supply Regulators, Digital Logic Inputs, Microprocessor Inputs


Description

The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual inline package.