Feature●The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual inline package●Minimum BVceo of 70 V Guaranteed●UL1577, 5,000 VACRMS for 1 Minute●DIN EN/IEC60747-5-5●Example Applications: Power Supply Regulators, Digital Logic Inputs, Microprocessor InputsDescription
The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual inline package.