Feature

●The H11AAXM series consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single silicon phototransistor output
●Bi-polar emitter input
●Built-in reverse polarity input protection
●Underwriters Laboratory (UL) recognized File#E90700, Volume 2, VDE approved File #102497 (ordering option ‘V’)
●Example Applications: Consumer Appliances, Industrial Motor


Description

The H11AAXM series consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single silicon phototransistor output.