Feature●The H11AAXM series consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single silicon phototransistor output●Bi-polar emitter input●Built-in reverse polarity input protection●Underwriters Laboratory (UL) recognized File#E90700, Volume 2, VDE approved File #102497 (ordering option ‘V’)●Example Applications: Consumer Appliances, Industrial MotorDescription
The H11AAXM series consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single silicon phototransistor output.